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Initial growth of GaAs on Si(111) substrates by molecular beam epitaxy

✍ Scribed by Tokuo Yodo; Masao Tamura

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 477 KB
Volume: 154
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)00160-3

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