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Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

✍ Scribed by Xiang-jiu Zhang; Hong-qiang Lu; Da-wai Gong; Xue-kun Lu; Xiang-jun Chen; Ji-huang Hu; Wei-ning Huang; Yong-liang Fan; Xun Wang

No coin nor oath required. For personal study only.

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