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Chemical beam epitaxy selectively-regrown n+-GaAs layer on metalorganic chemical vapor deposition grown GaInP/GaInAs/GaAs pseudomorphic high electron mobility transistor structure

✍ Scribed by P. Bove; K. Ono; K. Joshin; H. Tanaka; K. Kasai; J. Komeno


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
735 KB
Volume
136
Category
Article
ISSN
0022-0248

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