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Improved hole transport properties of highly strained In0.35Ga0.65As channel double-modulation-doped structures grown by MBE on GaAs

✍ Scribed by Makoto Kudo; Hidetoshi Matsumoto; Takuma Tanimoto; Tomoyoshi Mishima; Isao Ohbu


Book ID
108342353
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
314 KB
Volume
175-176
Category
Article
ISSN
0022-0248

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