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Fabrication of strained and double heterojunction InxGa 1-xP/In0.2Ga0.8As high electron mobility transistors grown by solid-source molecular beam epitaxy

✍ Scribed by Yoon, S.F.; Gay, B.P.; Zheng, H.Q.; Kam, H.T.; Degenhardt, J.

Book ID: 114538167
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 109 KB
Volume: 47
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.841249

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