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High uniformity of Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures grown by molecular beam epitaxy on 3″ GaAs substrates

✍ Scribed by Yi-Jen Chan; Ming-Ta Yang; Tzu-Jin Yeh; Jen-Inn Chyi

Book ID
112812713
Publisher
Springer US
Year
1994
Tongue
English
Weight
431 KB
Volume
23
Category
Article
ISSN
0361-5235

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Self-organized In,,,Ga,,,As/ In,,&.& quantum wire (QWR) structures were formed on (775)B InP substrates by molecular beam epitaxy (MBE) which showed good one-dimensionality (the polarization degree P [ = (I,, -I, )/(I,,+ I, )] as large as 0.2) and long emitting wavelengths in the range of 1.2 um at