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High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels

✍ Scribed by Koblmüller, G.; Chu, R. M.; Raman, A.; Mishra, U. K.; Speck, J. S.

Book ID: 121671775
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 829 KB
Volume: 107
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3285309

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