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Step-Flow Growth of InN on N-Polarity GaN Template by Molecular Beam Epitaxy with a Growth Rate of 1.3 μm/h

✍ Scribed by K. Xu; W. Terashima; T. Hata; N. Hashimoto; Y. Ishitani; A. Yoshikawa

Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 162 KB
Volume: 0
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200390067

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