✦ LIBER ✦
Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy
✍ Scribed by Zhao, S.; Kibria, M. G.; Wang, Q.; Nguyen, H. P. T.; Mi, Z.
- Book ID
- 120365685
- Publisher
- The Royal Society of Chemistry
- Year
- 2013
- Tongue
- English
- Weight
- 908 KB
- Volume
- 5
- Category
- Article
- ISSN
- 2040-3364
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