Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates
β Scribed by Yuen-Yee Wong, Wei-Ching Huang, Hai-Dang Trinh, Tsung-Hsi Yang, Jet-Rung Chang, Micheal Chen, Edward Yi Chang
- Book ID
- 113087425
- Publisher
- Springer US
- Year
- 2012
- Tongue
- English
- Weight
- 457 KB
- Volume
- 41
- Category
- Article
- ISSN
- 0361-5235
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## Abstract An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by Xβray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best sam
a-Plane GaN templates were grown on r-plane sapphire substrate by metalorganic vapor phase epitaxy (MOVPE) and then undoped a-plane GaN layers were grown at different growth temperatures on the a-plane GaN templates by plasma-assisted molecular beam epitaxy (PA-MBE). In order to investigate the effe