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Interface structural defects and photoluminescence properties of epitaxial GaN and AlGaN/GaN layers grown on sapphire

✍ Scribed by V. P. Klad’ko; S. V. Chornen’kii; A. V. Naumov; A. V. Komarov; M. Tacano; Yu. N. Sveshnikov; S. A. Vitusevich; A. E. Belyaev

Book ID
111443610
Publisher
Springer
Year
2006
Tongue
English
Weight
198 KB
Volume
40
Category
Article
ISSN
1063-7826

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