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Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties

✍ Scribed by Hyun Jin Kim; Soon-Yong Kwon; Sanggiun Yim; Hyunseok Na; Bong Kee; Euijoon Yoon; Jaehoon Kim; Si-Hyun Park; Heonsu Jeon; Sunwoon Kim; Jun Ho Seo; Keunseop Park; Moon Suk Seon; Cheolsoo Sone; Ok Hyun Nam; Yongjo Park

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
121 KB
Volume
3
Category
Article
ISSN
1567-1739

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## Abstract We report results on growth studies of Fe on GaN, in particular with respect to structural and magnetic properties. The growth of GaN has been carried out by molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE) on Si(111) and Al~2~O~3~ substrates, respectively. Fe