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The defect structure of AlGaN/GaN superlattices grown on sapphire by the MOCVD method

✍ Scribed by R. N. Kyutt; G. N. Mosina; M. P. Shcheglov; L. M. Sorokin


Book ID
111445427
Publisher
SP MAIK Nauka/Interperiodica
Year
2006
Tongue
English
Weight
272 KB
Volume
48
Category
Article
ISSN
1063-7834

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Growth pressure-dependent generation of trap states in AlGaN/GaN heterostructures was analysed. AlGaN/GaN heterostructures were grown on sapphire substrates at two different pressures of AlGaN layer growth, 150 and 200 Torr, with other growth parameters unchanged. The measured Al mole fraction in Al