The effect of substrate misorientation on the optical, structural, and electrical properties of GaN grown on sapphire by MOCVD

✍ Scribed by P. A. Grudowski; A. L. Holmes; C. J. Eiting; R. D. Dupuis

• Publisher: Springer US
• Year: 1997
• Tongue: English
• Weight: 660 KB
• Volume: 26
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/s11664-997-0160-2