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Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD

✍ Scribed by S. Çörekçi; M. K. Öztürk; A. Bengi; M. Çakmak; S. Özçelik; E. Özbay

Publisher
Springer
Year
2010
Tongue
English
Weight
643 KB
Volume
46
Category
Article
ISSN
0022-2461

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