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Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

✍ Scribed by K. Hiramatsu; S. Itoh; H. Amano; I. Akasaki; N. Kuwano; T. Shiraishi; K. Oki

Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 742 KB
Volume: 115
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(91)90816-n

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