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The growth of thick GaN film on sapphire substrate by using ZnO buffer layer

✍ Scribed by Detchprohm, T.; Amano, H.; Hiramatsu, K.; Akasaki, I.


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
594 KB
Volume
128
Category
Article
ISSN
0022-0248

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MOCVD Growth and Characterization of GaN
✍ Zhang, X. ;Chua, S. J. ;Feng, Z. C. ;Chen, J. ;Lin, J. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 169 KB πŸ‘ 2 views

GaN thin films have been grown on Si(001) substrate with specially designed composite intermediate layers (CIL) consisting of an ultrathin amorphous silicon layer and a GaN/Al x Ga 1Β± Β±x N multilayered buffer by low pressure metal-organic chemical vapor deposition (MOCVD). The improved film quality