Structural characterization of thick (1122) GaN layers grown by HVPE on m-plane sapphire

✍ Scribed by Usikov, Alexander ;Soukhoveev, Vitali ;Shapovalov, Lisa ;Syrkin, Alexander ;Ivantsov, Vladimir ;Scanlan, Bernard ;Nikiforov, Alexey ;Strittmatter, Andre ;Johnson, Noble ;Zheng, Jian-Guo ;Spiberg, Philippe ;El-Ghoroury, Hussein

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 466 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200983655

✦ Synopsis

Abstract

This paper reports structural characterization of thick $(11\bar {2}2)$‐oriented GaN layers by means of XRD, TEM, and micro‐ CL. The semi‐polar $(11\bar {2}2)$ GaN layers were grown on m‐plane sapphire substrates by HVPE. Their structural quality improved with thickness. Threading dislocation density of 3 × 10^8^ cm^−2^ and stacking faults density of 4 × 10^4^ cm^−1^ were measured at the surface of 20 µm thick $(11\bar {2}2)$ GaN layers. The semi‐polar GaN layers were used as template substrates to grow InGaN/GaN MQW heterostructures by MOCVD that demonstrated optically pumped lasing at 500 nm wavelength. The results demonstrate the longest wavelength yet reported for a photo‐pumped laser on template substrates.