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In-situ reflectivity observation of GaN layers grown directly on sapphire by HVPE using low-temperature nucleation layers

✍ Scribed by D. Martin; J. Napierala; H. J. Bühlmann; M. Ilegems


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
140 KB
Volume
2
Category
Article
ISSN
1862-6351

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