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Growth and Characterization of LED Structures Grown by MOCVD on HVPE-Grown GaN Templates

✍ Scribed by A.S. Usikov; W.V. Lundin; E.E. Zavarin; A.I. Besulkin; N.M. Shmidt; A.I. Pechnikov; Y. Shapovalova; V.A. Soukhoveev; G.H. Gainer

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
85 KB
Volume
0
Category
Article
ISSN
1862-6351

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## Abstract The crystallographic structures of the various Metalorganic Vapour Phase Epitaxy (MOVPE) thin GaN epitaxial layers deposited on (00.1) sapphire substrates are described and compared with the structural properties of the thick gallium nitride layers deposited by Hydride Vapour Phase Epit