Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

✍ Scribed by E. Gaubas; P. Pobedinskas; J. Vaitkus; A. Uleckas; A. Žukauskas; A. Blue; M. Rahman; K.M. Smith; E. Aujol; B. Beaumont; J.-P. Faurie; P. Gibart

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 252 KB
• Volume: 552
• Category: Article
• ISSN: 0168-9002
• DOI: 10.1016/j.nima.2005.06.011