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Characterization of as-grown and heavily irradiated GaN epitaxial structures by photoconductivity and photoluminescence

✍ Scribed by E. Gaubas; S. Juršėnas; R. Tomašiūnas; J. Vaitkus; A. Žukauskas; A. Blue; M. Rahman; K.M. Smith


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
377 KB
Volume
546
Category
Article
ISSN
0168-9002

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