✦ LIBER ✦

Time- and Temperature-Resolved Photoluminescence of GaN:Mg Epitaxial Layers Grown by MOVPE

✍ Scribed by A.L. Gurskii; I.P. Marko; E.V. Lutsenko; V.N. Pavlovskii; V.Z. Zubialevich; G.P. Yablonskii; B. Schineller; O. Schön; M. Heuken

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 109 KB
Volume: 228
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(200111)228:2<361::aid-pssb361>3.0.co;2-u

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Time-Resolved Photoluminescence of Cubic

Time-Resolved Photoluminescence of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy

✍ H. Yaguchi; J. Wu; H. Akiyama; M. Baba; K. Onabe; Y. Shiraki 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 136 KB 👁 2 views

Analysis of Time-Resolved Donor–Acceptor

Analysis of Time-Resolved Donor–Acceptor-Pair Recombination in MBE and MOVPE Grown GaN : Mg

✍ S. Strauf; S.M. Ulrich; P. Michler; J. Gutowski; T. Böttcher; S. Figge; S. Einfe 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 100 KB 👁 2 views

Intrinsic Defects of ZnS Epitaxial Layer

Intrinsic Defects of ZnS Epitaxial Layers Grown by MOVPE

✍ K. Yoshino; H. Komaki; P. Prete; K. Ichino; A. Memon; M. Yoneta; H. Kobayashi; N 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 84 KB 👁 1 views

Radiative Recombination Dynamics of Carr

Radiative Recombination Dynamics of Carriers in InxGa1-xN Epitaxial Layers Revealed by Temperature Dependence of Time-Resolved Photoluminescence Spectra

✍ Kudo, H. ;Tanabe, T. ;Ishibashi, H. ;Zheng, R. ;Yamada, Y. ;Taguchi, T. 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 91 KB 👁 1 views

The radiative recombination process of In x Ga 1±x N epitaxial layers was investigated by means of the temperature dependence of time-resolved photoluminescence spectra. Two emission components separated by about 40 meV were clearly observed. At 6 K, the higher-and lower-energy components had decay-

Correlations between Structural, Electri

Correlations between Structural, Electrical and Optical Properties of GaN Layers Grown by Molecular Beam Epitaxy

✍ V. Kirchner; M. Fehrer; S. Figge; H. Heinke; S. Einfeldt; D. Hommel; H. Selke; P 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 120 KB 👁 2 views

a), M. Fehrer (a), S. Figge (a), H. Heinke (a), S. Einfeldt (a), D. Hommel (a), H. Selke (b), and P. L. Ryder (b)

Effects of Substrate Pretreatment and Bu

Effects of Substrate Pretreatment and Buffer Layers on GaN Epilayers Grown by Hydride Vapor Phase Epitaxy

✍ Zhang, W. ;Alves, H.R. ;Blaesing, J. ;Riemann, T. ;Heuken, M. ;Veit, P. ;Pfister 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 102 KB 👁 2 views