Radiative Recombination Dynamics of Carriers in InxGa1-xN Epitaxial Layers Revealed by Temperature Dependence of Time-Resolved Photoluminescence Spectra
✍ Scribed by Kudo, H. ;Tanabe, T. ;Ishibashi, H. ;Zheng, R. ;Yamada, Y. ;Taguchi, T.
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 91 KB
- Volume
- 180
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
The radiative recombination process of In x Ga 1±x N epitaxial layers was investigated by means of the temperature dependence of time-resolved photoluminescence spectra. Two emission components separated by about 40 meV were clearly observed. At 6 K, the higher-and lower-energy components had decay-time constants of 30 and 540 ps, respectively. The energy transfer of carriers between the two levels was observed. With increasing temperature, the decay-time constant of the higher-energy component was almost constant of about 30 ps, whilst that of the lower-energy component decreased from 540 to 20 ps. On the basis of a strong electron±phonon interaction the contribution of a polaron state of electrons to the recombination process of the higher-energy component is proposed.