Strong carrier localization in Sb-termin
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T Mozume
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Article
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2003
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Elsevier Science
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English
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We report here on a study of the photoluminescence (PL) and photore ectance (PR) spectra from InGaAs/AlAsSb multiple quantum wells with antimony interface terminations that were grown by molecular beam epitaxy. The PL spectrum exhibits a broad peak between 4 and 300 K, composed of interface-related