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Photoluminescence and photoreflectance characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

โœ Scribed by T Mozume; N Georgiev


Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
104 KB
Volume
13
Category
Article
ISSN
1386-9477

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โœ T Mozume ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 97 KB

We report here on a study of the photoluminescence (PL) and photore ectance (PR) spectra from InGaAs/AlAsSb multiple quantum wells with antimony interface terminations that were grown by molecular beam epitaxy. The PL spectrum exhibits a broad peak between 4 and 300 K, composed of interface-related