Strong carrier localization in Sb-terminated InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

✍ Scribed by T Mozume

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 97 KB
• Volume: 17
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00768-3

✦ Synopsis

We report here on a study of the photoluminescence (PL) and photore ectance (PR) spectra from InGaAs/AlAsSb multiple quantum wells with antimony interface terminations that were grown by molecular beam epitaxy. The PL spectrum exhibits a broad peak between 4 and 300 K, composed of interface-related transitions and transitions between conÿned energy levels in the well (EC). Features of the quantum well related interband transitions (EnHm) are clearly observed in the PR spectra between 55 and 300 K. Below 150 K, EC shifts signiÿcantly toward lower energy from E1H1, indicating strong carrier localization.