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1.3 μm Exciton resonances in InGaAs quantum wells grown by molecular beam epitaxy using a slowly graded buffer layer

✍ Scribed by S.M. Lord; B. Pezeshki; S.D. Kim; J.S. Harris Jr.


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
452 KB
Volume
127
Category
Article
ISSN
0022-0248

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