Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template
✍ Scribed by Reshchikov, M. A.; Huang, D.; Yun, F.; He, L.; Morkoç, H.; Reynolds, D. C.; Park, S. S.; Lee, K. Y.
- Book ID
- 126534047
- Publisher
- American Institute of Physics
- Year
- 2001
- Tongue
- English
- Weight
- 241 KB
- Volume
- 79
- Category
- Article
- ISSN
- 0003-6951
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## Abstract An investigation of InN layers grown on GaN templates by molecular beam epitaxy (MBE) has been carried out by X‐ray diffraction (XRD), Raman spectroscopy (RS) and photoluminescence (PL). A good correlation is noticed between their crystalline quality and optical properties. The best sam