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Effect of ambient on photoluminescence from GaN grown by molecular-beam epitaxy

✍ Scribed by M. Zafar Iqbal; M. A. Reshchikov; L. He; H. Morkoç

Book ID: 107453021
Publisher: Springer US
Year: 2003
Tongue: English
Weight: 84 KB
Volume: 32
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-003-0156-5

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