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Excitonic recombination in GaN grown by molecular beam epitaxy

✍ Scribed by Smith, M.; Chen, G. D.; Li, J. Z.; Lin, J. Y.; Jiang, H. X.; Salvador, A.; Kim, W. K.; Aktas, O.; Botchkarev, A.; Morkoc, H.


Book ID
118028795
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
366 KB
Volume
67
Category
Article
ISSN
0003-6951

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Strain relaxation in AlN/GaN heterostruc
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## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasma‐assisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between