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Growth kinetics of GaN grown by gas-source molecular beam epitaxy

โœ Scribed by J.R. Jenny; R. Kaspi; K.R. Evans


Book ID
108342387
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
453 KB
Volume
175-176
Category
Article
ISSN
0022-0248

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We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1:10 mm and 1:5421:70 mm wavelength region. More