Quantum dot lasers grown by gas source molecular-beam epitaxy

✍ Scribed by Q. Gong; P. Chen; S.G. Li; Y.F. Lao; C.F. Cao; C.F. Xu; Y.G. Zhang; S.L. Feng; C.H. Ma; H.L. Wang

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 262 KB
• Volume: 323
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.12.014

✦ Synopsis

We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1:10 mm and 1:5421:70 mm wavelength region. More than 50 mW optical power was collected from one facet of the InAs/GaAs quantum dot lasers at 20 1C, while for InAs/InP quantum dot lasers the maximum output power was measured as 30 mW. For InAs/InP material system, by increasing the layer thickness of deposited InAs from 3.0 to 3.5 monolayers, the lasing wavelength can be extended from 1:521:6 mm to 1:621:7 mm. Moreover, a tunable quantum dot external cavity laser was demonstrated, utilizing the broad gain profile of InAs quantum dots.