## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri
✦ LIBER ✦
Short wavelength (visible) quantum well lasers grown by molecular beam epitaxy
✍ Scribed by P. Blood; E.D. Fletcher; K. Woodbridge; P.J. Hulyer
- Publisher
- Elsevier Science
- Year
- 1985
- Weight
- 228 KB
- Volume
- 129
- Category
- Article
- ISSN
- 0378-4363
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Long-wavelength strained-layer InGaAs/Ga
✍
T. Piwoński; P. Sajewicz; J. M. Kubica; M. Zbroszczyk; K. Regiński; B. Mroziewic
📂
Article
📅
2001
🏛
John Wiley and Sons
🌐
English
⚖ 117 KB
Low threshold InAlGaAsAlGaAs strained qu
✍
J.-I Chyi; J.-H Gau; J.-L Shieh; J.-W Pan; Y.-J Chan; J.-W Hong; M.-F Huang
📂
Article
📅
1995
🏛
Elsevier Science
🌐
English
⚖ 166 KB
Quantum dot lasers grown by gas source m
✍
Q. Gong; P. Chen; S.G. Li; Y.F. Lao; C.F. Cao; C.F. Xu; Y.G. Zhang; S.L. Feng; C
📂
Article
📅
2011
🏛
Elsevier Science
🌐
English
⚖ 262 KB
We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1:10 mm and 1:5421:70 mm wavelength region. More
InxGa1−xSbGaAs quantum well structures g
✍
M.J. Ekenstedt; E. Olsson; G. Treideris; T.G. Andersson; S.M. Wang; H. Qu
📂
Article
📅
1992
🏛
Elsevier Science
🌐
English
⚖ 485 KB
Strained InAs/Ga0.47In0.53As quantum-wel
✍
Eric Tournié; Patrick Grunberg; Catherine Fouillant; Alexei Baranov; André Joull
📂
Article
📅
1994
🏛
Elsevier Science
🌐
English
⚖ 256 KB
InGaAs/InP strained layer quantum wells
✍
S. Loualiche; A. Le Corre; A. Godefroy; F. Clerot; D. Lecrosnier; A. Poudoulec;
📂
Article
📅
1993
🏛
Elsevier Science
🌐
English
⚖ 289 KB