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Low threshold InAlGaAsAlGaAs strained quantum well lasers grown by molecular beam epitaxy

✍ Scribed by J.-I Chyi; J.-H Gau; J.-L Shieh; J.-W Pan; Y.-J Chan; J.-W Hong; M.-F Huang

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 166 KB
Volume: 38
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(95)98682-s

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## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri

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