## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri
✦ LIBER ✦
Strained InAs/Ga0.47In0.53As quantum-well heterostructures grown by molecular-beam epitaxy for long-wavelength laser applications
✍ Scribed by Eric Tournié; Patrick Grunberg; Catherine Fouillant; Alexei Baranov; André Joullié; Klaus H. Ploog
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 256 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0038-1101
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Low-temperature photoluminescence measurements were carried out to assess the changes in the properties of strained GaAs/InGaAs/GaAs multi-quantum-wells grown by molecular beam epitaxy at different substrate (well) temperatures with and without growth interruption at the heterointerfaces. Sharp exci