๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Selective area growth of GaN using gas source molecular beam epitaxy

โœ Scribed by V. K. Gupta; K. L. Averett; M. W. Koch; B. L. McIntyre; G. W. Wicks


Book ID
107452425
Publisher
Springer US
Year
2000
Tongue
English
Weight
181 KB
Volume
29
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Selective-area growth and fabrication of
โœ Hong, Seung Jae ;Chapman, Patrick ;Krein, Philip T. ;Kim, Kyekyoon (Kevin) ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 172 KB

## Abstract For the first time, selectiveโ€area growth (SAG) technique has been developed using plasmaโ€assisted molecular beam epitaxy (PAMBE), enabling fabrication of a recessedโ€gate structure for the metalโ€semiconductor fieldโ€effect transistor (MESFET) without etching. On patterned SiO~2~ samples,