✦ LIBER ✦

Epitaxial growth of cubic and hexagonal GaN by gas source molecular beam epitaxy using a microwave plasma nitrogen source

✍ Scribed by H. Okumura; S. Misawa; T. Okahisa; S. Yoshida

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 312 KB
Volume: 136
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(94)90440-5

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth of GaN by gas-source molecular be

Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals

✍ W.S. Wong; N.Y. Li; H.K. Dong; F. Deng; S.S. Lau; C.W. Tu; J. Hays; S. Bidnyk; J 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 418 KB

Epitaxial growth of GaAs and GaN by gas

Epitaxial growth of GaAs and GaN by gas source molecular beam epitaxy using organic group V compounds

✍ H. Okumura; S. Yoshida; S. Misawa; E. Sakuma 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 387 KB

Growth of ZnS and ZnSSe by gas-source mo

Growth of ZnS and ZnSSe by gas-source molecular beam epitaxy using hydride group VI sources

✍ Masayuki Imaizumi; Yasuyuki Endoh; Muneyoshi Suita; Ken-ichi Ohtsuka; Toshiro Is 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 513 KB

Selective-area epitaxial growth of GaAs

Selective-area epitaxial growth of GaAs by gas-source molecular-beam epitaxy using metal gallium and trisdimethylaminoarsine

✍ S. Goto; C. Jelen; Y. Nomura; Y. Morishita; Y. Katayama 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 600 KB

Evaluation of a new plasma source for mo

Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films

✍ W.E. Hoke; P.J. Lemonias; D.G. Weir 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 411 KB

In situ studies of epitaxial silicon gro

In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy

✍ B. A. Joyce; J. Zhang; A. G. Taylor; M. H. Xie; J. M. Fernández; A. K. Lees 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 297 KB 👁 1 views

The value of in situ monitoring to study growth dynamics and surface reaction kinetics in a gas source molecular beam epitaxy process is illustrated with reference to the growth of Si ®lms on Si(001) substrates using a beam of disilane (Si 2 H 6 ). By using a combination of re¯ection high-energy ele