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Growth of GaN by gas-source molecular beam epitaxy by ammonia and by plasma generated nitrogen radicals

✍ Scribed by W.S. Wong; N.Y. Li; H.K. Dong; F. Deng; S.S. Lau; C.W. Tu; J. Hays; S. Bidnyk; J.J. Song

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 418 KB
Volume: 164
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)01067-x

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