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Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films

✍ Scribed by W.E. Hoke; P.J. Lemonias; D.G. Weir


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
411 KB
Volume
111
Category
Article
ISSN
0022-0248

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Growth and Characterization of InGaN/GaN
✍ X.Q. Shen; T. Ide; M. Shimizu; F. Sasaki; H. Okumura πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 101 KB πŸ‘ 2 views

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t