Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy

✍ Scribed by Dimitrakopulos, G. P. ;Komninou, Ph. ;Kehagias, Th. ;Sahonta, S.-L. ;Kioseoglou, J. ;Vouroutzis, N. ;Hausler, I. ;Neumann, W. ;Iliopoulos, E. ;Georgakilas, A. ;Karakostas, Th.

• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 384 KB
• Volume: 205
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200780137

✦ Synopsis

Abstract

The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasma‐assisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between the GaN spacers and the thicker AlN layers. Elastic strain is retained even in the thicker layers of the heterostructure. Extensive introduction of threading and misfit dislocations is observed at and above the 7 nm AlN layer. The threading dislocations adopt inclined zig‐zag line directions thus contributing to the relief of alternating compressive‐tensile elastic strain across the the layers of the heterostructure. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)