✦ LIBER ✦

High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

✍ Scribed by Veena Misra; Xiaoli Xu; Brian E. Hornung; Richard T. Kuehn; Donald S. Miles; John R. Hauser; Jimmie J. Wortman

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Metal-oxide-semiconductor characteristic

✍ W. Ting; P.C. Li; G.Q. Lo; J. Lee; D.L. Kwong 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 267 KB

N-channel and p-channel MOSFETs with oxy

✍ W.L. Hill; E. Vogel; P.K. McLarty; V. Misra; J.J. Wortman; V. Watt 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 264 KB

Mobility behaviour of n-channel and p-ch

✍ Vogel, E.M.; Hill, W.L.; Misra, V.; McLarty, P.K.; Wortman, J.J.; Hauser, J.R.; 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 758 KB

A comparison of MOS gate structures form

✍ XiaoWei Ren; Mehmet C. Ozturk; Jimmie J. Wortman; Catherine Blat; Edward Niccoli 📂 Article 📅 1991 🏛 Springer US 🌐 English ⚖ 798 KB

Low-pressure rapid thermal chemical vapo

✍ Hill, W.L.; Vogel, E.M.; Misra, V.; McLarty, P.K.; Wortman, J.J. 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 992 KB

ChemInform Abstract: Formation of High-Q

✍ D. LANDHEER; Y. TAO; J. E. HULSE; T. QUANCE; D.-X. XU 📂 Article 📅 2010 🏛 John Wiley and Sons ⚖ 28 KB