Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition

✍ Scribed by Vogel, E.M.; Hill, W.L.; Misra, V.; McLarty, P.K.; Wortman, J.J.; Hauser, J.R.; Morfouli, P.; Ghibaudo, G.; Ouisse, T.

• Book ID: 114536460
• Publisher: IEEE
• Year: 1996
• Tongue: English
• Weight: 758 KB
• Volume: 43
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.491252