Low-pressure rapid thermal chemical vapor deposition of oxynitride gate dielectrics for n-channel and p-channel MOSFETs

✍ Scribed by Hill, W.L.; Vogel, E.M.; Misra, V.; McLarty, P.K.; Wortman, J.J.

• Book ID: 114536343
• Publisher: IEEE
• Year: 1996
• Tongue: English
• Weight: 992 KB
• Volume: 43
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.477588