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N-channel and p-channel MOSFETs with oxynitride gate dielectrics formed using low pressure rapid thermal chemical vapor deposition

✍ Scribed by W.L. Hill; E. Vogel; P.K. McLarty; V. Misra; J.J. Wortman; V. Watt

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Low-pressure rapid thermal chemical vapo

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Mobility behaviour of n-channel and p-ch

✍ Vogel, E.M.; Hill, W.L.; Misra, V.; McLarty, P.K.; Wortman, J.J.; Hauser, J.R.; 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 758 KB

A comparison of MOS gate structures form

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