A comparison of MOS gate structures formed by depositing polycrystalline silicon on thin oxides using conventional low pressure chemical vapor deposition and rapid thermal chemical vapor deposition

✍ Scribed by XiaoWei Ren; Mehmet C. Ozturk; Jimmie J. Wortman; Catherine Blat; Edward Niccolian

• Book ID: 112812141
• Publisher: Springer US
• Year: 1991
• Tongue: English
• Weight: 798 KB
• Volume: 20
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/bf02651901