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High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons

✍ Scribed by Azize, Mohamed; Hsu, Allen L.; Saadat, Omair I.; Smith, Matthew; Gao, Xiang; Guo, Shiping; Gradecak, Silvija; Palacios, Tomás

Book ID
126500334
Publisher
IEEE
Year
2011
Tongue
English
Weight
290 KB
Volume
32
Category
Article
ISSN
0741-3106

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The structure of InAlN/GaN heterostructu
The structure of InAlN/GaN heterostructures for high electron mobility transistors
✍ Vilalta-Clemente, A. ;Poisson, M. A. ;Behmenburg, H. ;Giesen, C. ;Heuken, M. ;Ru 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 462 KB

## Abstract In the investigated InAlN/GaN layers, it is shown that the surface morphology and the crystallinity of the alloy critically depend on the In composition. Atomic force microscopy analysis points out that step flow growth is not easily attained in this system. When the InAlN or AlN interl