✦ LIBER ✦

High-dielectric-constant Ta[sub 2]O[sub 5]/n-GaN metal-oxide-semiconductor structure

✍ Scribed by Tu, L. W.; Kuo, W. C.; Lee, K. H.; Tsao, P. H.; Lai, C. M.; Chu, A. K.; Sheu, J. K.

Book ID: 120478619
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 265 KB
Volume: 77
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1332815

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Work-function difference between Al and

Work-function difference between Al and n-GaN from Al-gated n-GaNânitrided-thin-Ga[sub 2]O[sub 3]âSiO[sub 2] metal oxide semiconductor structures

✍ Bae, Choelhwyi; Krug, Cristiano; Lucovsky, Gerald; Chakraborty, Arpan; Mishra, U 📂 Article 📅 2004 🏛 American Institute of Physics 🌐 English ⚖ 358 KB

Properties of InAs metal-oxide-semicondu

Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al[sub 2]O[sub 3] Dielectric

✍ Li, Ning; Harmon, Eric S.; Hyland, James; Salzman, David B.; Ma, T. P.; Xuan, Yi 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 618 KB

AlGaN/GaN metal–oxide–semiconductor high

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc[sub 2]O[sub 3] as the gate oxide and surface passivation

✍ Mehandru, R.; Luo, B.; Kim, J.; Ren, F.; Gila, B. P.; Onstine, A. H.; Abernathy, 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 289 KB

High-performance self-aligned inversion-

High-performance self-aligned inversion-channel In[sub 0.53]Ga[sub 0.47]As metal-oxide-semiconductor field-effect-transistor with Al[sub 2]O[sub 3]âGa[sub 2]O[sub 3](Gd[sub 2]O[sub 3]) as gate dielectrics

✍ Lin, T. D.; Chiu, H. C.; Chang, P.; Tung, L. T.; Chen, C. P.; Hong, M.; Kwo, J.; 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 729 KB

InGaAs metal-oxide-semiconductor capacit

InGaAs metal-oxide-semiconductor capacitors with HfO[sub 2] gate dielectric grown by atomic-layer deposition

✍ Goel, N.; Majhi, P.; Chui, C. O.; Tsai, W.; Choi, D.; Harris, J. S. 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 741 KB

Investigation and modeling of the electr

Investigation and modeling of the electrical properties of metalâoxideâmetal structures formed from chemical vapor deposited Ta[sub 2]O[sub 5] films

✍ Blonkowski, S.; Regache, M.; Halimaoui, A. 📂 Article 📅 2001 🏛 American Institute of Physics 🌐 English ⚖ 670 KB