𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Hall hole mobility in boron-doped homoepitaxial diamond

✍ Scribed by Pernot, J.; Volpe, P. N.; Omnès, F.; Muret, P.; Teraji, T.

Book ID
111868030
Publisher
The American Physical Society
Year
2010
Tongue
English
Weight
332 KB
Volume
81
Category
Article
ISSN
1098-0121

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Substrate influence on MPCVD boron-doped
Substrate influence on MPCVD boron-doped homoepitaxial diamond
✍ Habka, Nada ;Pinault, Marie-Amandine ;Mer, Christine ;Jomard, François ;Barjon, 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 967 KB

## Abstract We report a study of boron‐doped diamond epilayers grown on (100) HPHT diamond substrates by microwave plasma chemical vapor deposition (MPCVD) in simultaneous or successive runs. The structural and crystalline quality of the samples have been investigated by several techniques. The pro

Superconductivity in boron-doped homoepi
Superconductivity in boron-doped homoepitaxial (001)-oriented diamond layers
✍ Kačmarčik, J. ;Marcenat, C. ;Cytermann, C. ;Ferreira da Silva, A. ;Ortega, L. ;G 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 245 KB

## Abstract The crystallinity and built‐in strain of diamond epilayers grown by MPCVD with boron contents __n__~B~ varying from 2 × 10^20^ to 2 × 10^21^ cm^–3^ as evaluated by SIMS are assessed by HR‐XR Diffraction. Both ac transport and ac susceptibility measurements show that the critical concent