Homoepitaxial boron-doped diamond with very low compensation
✍ Scribed by Barjon, J. ;Chikoidze, E. ;Jomard, F. ;Dumont, Y. ;Pinault-Thaury, M.-A. ;Issaoui, R. ;Brinza, O. ;Achard, J. ;Silva, F.
- Book ID
- 115561458
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 450 KB
- Volume
- 209
- Category
- Article
- ISSN
- 0031-8965
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## Abstract We report a study of boron‐doped diamond epilayers grown on (100) HPHT diamond substrates by microwave plasma chemical vapor deposition (MPCVD) in simultaneous or successive runs. The structural and crystalline quality of the samples have been investigated by several techniques. The pro
## Abstract Hall‐effect measurements on single crystal boron‐doped CVD diamond in the temperature interval 80–450 K are presented together with SIMS measurements of the dopant concentration. Capacitance–voltage measurements on rectifying Schottky junctions manufactured on the boron‐doped structures