Extreme dielectric strength in boron doped homoepitaxial diamond
β Scribed by Volpe, Pierre-Nicolas; Muret, Pierre; Pernot, Julien; Omnes, Franck; Teraji, Tokuyuki; Koide, Yasuo; Jomard, Francois; Planson, Dominique; Brosselard, Pierre; Dheilly, Nicolas; Vergne, Bertrand; Scharnholz, Sigo
- Book ID
- 118025194
- Publisher
- American Institute of Physics
- Year
- 2010
- Tongue
- English
- Weight
- 470 KB
- Volume
- 97
- Category
- Article
- ISSN
- 0003-6951
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## Abstract We report a study of boronβdoped diamond epilayers grown on (100) HPHT diamond substrates by microwave plasma chemical vapor deposition (MPCVD) in simultaneous or successive runs. The structural and crystalline quality of the samples have been investigated by several techniques. The pro
## Abstract The crystallinity and builtβin strain of diamond epilayers grown by MPCVD with boron contents __n__~B~ varying from 2 Γ 10^20^ to 2 Γ 10^21^ cm^β3^ as evaluated by SIMS are assessed by HRβXR Diffraction. Both ac transport and ac susceptibility measurements show that the critical concent